TOSHIBA
TOSHIBA MG200Q1US51 IGBT
Insulated Gate Bipolar Transistor; 1200V Collector-Emitter Voltage; 20V Gate-Emitter Voltage; 1500W Collector Power Dissipation; GTR Module Silicon N Channel; 150 Degree C Junction Temperature; 2500V Isolation Voltage; -40 to 125 Storage Temperature
制造商部件号
BDI部件号